Product Summary
The TCET1600G is a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes in a 4-lead up to 16-lead plastic dual inline package. The TCET1600G is mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications are computer peripheral interface, microprocessor system interface, telecom equipment.
Parametrics
TCET1600G absolute maximum ratings: (1)Reverse voltage VR: 6 V; (2)Forward current IF: ±60 mA; (3)Forward surge current tp 3 10 μs IFSM: ±1.5 A; (4)Power dissipation Tamb 3 25°C PV: 100 mW; (5)Junction temperature Tj: 125°C; (6)Collector emitter voltage VCEO: 70 V; (7)Emitter collector voltage VECO: 7 V; (8)Collector current IC: 50 mA; (9)Collector peak current tp/T = 0.5, tp 3 10 ms ICM: 100 mA; (10)Power dissipation Tamb 3 25°C PV: 150 mW; (11)Junction temperature Tj: 125°C.
Features
TCET1600G feature: Low conduction losses due to low on-state resistance.
Diagrams
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![]() Transistor Output Optocouplers Phototransistor Out Single CTR >20% |
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