Product Summary

The TLP421F is a GaAs IRed & Photo-Transistor. The TLP421F consists of a silicone photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage.

Parametrics

tlp421bl absolute maximum ratings: (1)TUV approved: DIN EN 60747-5-2 Approved no. 40010944; (2)Maximum operating insulation voltage: 1130VPK; (3)Maximum permissible over voltage: 8000VPK; (4)Creepage distance: 8.0 mm (min); (5)Clearance: 8.0 mm (min); (6)Insulation thickness: 0.4 mm (min).

Features

tlp421bl features: (1)Collector−emitter voltage: 80V (min); (2)Current transfer ratio: 50% (min)Rank GB: 100% (min); (3)Isolation voltage: 5000 Vrms (min); (4)UL recognized: UL1577; (5)BSI approved: BS EN60065: 2002 Approved no. 8411 BS EN60950-1: 2002 Approved no. 8412; (6)SEMKO approved: EN60065, EN60950, EN60335 Approved no. 9910249 / 01.

Diagrams

tlp421bl pin connection