Product Summary
The tc7s02f is a high speed C2MOS 2-input NOR gate fabricated with silicon gate C2MOS technology. The tc7s02f achieves high speed operation similar to equivalent LSTTL while maintaining the C2MOS low power dissipation. All inputs of the tc7s02f is equipped with protection crcuits against static discharge or transient excess voltage.
Parametrics
tc7s02f absolute maximum ratings: (1) supply voltage range Vcc: -0.5 to 7V; (2) DC input voltage VIN: -0.5 to Vcc +0.5V; (3) DC output voltage VOUT: -0.5 to Vcc +0.5V; (4) Input diode current IIK: ±20mA; (5) Output diode current IOK: ±20mA; (6) DC output current Iout: ±12.5mA; (7) DC VCC/Ground current ICC: ±25mA; (8) Power dissipation PD: 200mW; (9) Storage temperature Tstg: -65 to +150°C; (10) Lead temperature (10s) TL: 260°C.
Features
tc7s02f features: (1) high speed: tpd=7ns (Typ.) at Vcc=5V; (2) low power dissipation: Icc=1μA (Max.) at Ta=25°C; (3) high noise immunity: VNIL=28% Vcc (Min.) ; (4) Output drive capability: 5LSTTL loads; (5) balanced propagation delays: tpLH=tpHL; (6) wide operating voltage range: Vcc (opr) =2-6V.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() TC7S02F(T5L,F,T) |
![]() Toshiba (VA) |
![]() IC GATE NOR 2INPUT 74HC02 5-SSOP |
![]() Data Sheet |
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![]() TC7S02F(T5L,T) |
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![]() IC GATE NOR 2INPUT 74HC02 5-SSOP |
![]() Data Sheet |
![]() Negotiable |
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![]() TC7S02FT5LFT |
![]() Toshiba |
![]() Gates (AND / NAND / OR / NOR) 2-Input NOR Gate 5Pin High Speed |
![]() Data Sheet |
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![]() TC7S02FUT5LFT |
![]() Toshiba |
![]() Gates (AND / NAND / OR / NOR) 2-Input NOR Gate 5Pin High Speed |
![]() Data Sheet |
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![]() TC7S02F(TE85L,F) |
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![]() IC GATE NOR 2INPUT 74HC02 5-SSOP |
![]() Data Sheet |
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