Product Summary
The RN2426 is a PNP epitaxial type (switching, inverter circuit, interface circuit and driver circuit applications).
Parametrics
RN2426 absolute maximum ratings: (1)Collector-Base voltage: -50 V; (2)Collector-Emitter voltage: -50 V; (3)Emitter-Base voltage: -5 V; (4)Collector current: -800 mA; (5)Collector power dissipation: 200 mW; (6)Junction temperature: 150 ℃; (7)Storage temperature range: -55~150 ℃.
Features
RN2426 features: (1)High current type (IC(MAX)= -800mA); (2)With built-in bias resistors; (3)Simplify circuit design; (4)Reduce a quantity of parts and manufacturing process; (5)Low VCE (sat); (6)Complementary to RN1421~RN1427.
Diagrams
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![]() RN2426 |
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![]() RN2401 |
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![]() RN2401(T5L,F,T) |
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![]() Transistors Switching (Resistor Biased) PNP 50V 0.1A TRANSISTOR LOG |
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![]() RN2402 |
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![]() RN2402S,LF |
![]() Toshiba |
![]() Transistors Switching (Resistor Biased) 50V VCBO 50V VCEO 100mA IC 200mW 4.7k |
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![]() RN2402T5LFT |
![]() Toshiba |
![]() Transistors Switching (Resistor Biased) PNP 50V 0.1A TRANSISTOR LOG |
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![]() RN2402TE85LF |
![]() Toshiba |
![]() Transistors Switching (Resistor Biased) Transistor PNP, 50V, 0.1A |
![]() Data Sheet |
![]() Negotiable |
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