(China (Mainland))
Product Summary
The mbm29lv800ba-90pftn is a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The mbm29lv800ba-90pftn is offered in a 48-pin TSOP(I), 44-pin SOP, and 48-ball FBGA packages. The mbm29lv800ba-90pftn is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The mbm29lv800ba-90pftn can also be reprogrammed in standard EPROM programmer.
Parametrics
mbm29lv800ba-90pftn absolute maximum ratings: (1)Storage Temperature: –55°C to +125°C; (2)Ambient Temperature with Power Applied: –40°C to +85°C; (3)Voltage with respect to Ground All pins except A9, OE, RESET (Note 1): –0.5 V to VCC+0.5 V; (4)VCC (Note 1): –0.5 V to +5.5 V; (5)A9, OE, and RESET (Note 2): –0.5 V to +13.0 V.
Features
mbm29lv800ba-90pftn features: (1)Single 3.0 V read, program, and erase Minimizes system level power requirements; (2)Compatible with JEDEC-standard commands Uses same software commands as E2PROMs; (3)Compatible with JEDEC-standard world-wide pinouts: 48-pin TSOP(I)(Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type); 44-pin SOP (Package suffix: PF); 48-ball FBGA (Package suffix: PBT); (4)Minimum 100,000 program/erase cycles; (5)High performance 70 ns maximum access time; (6)Sector erase architecture: One 8K word, two 4K words, one 16K word, and fifteen 32K words sectors in word mode; One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes sectors in byte mode; Any combination of sectors can be concurrently erased. Also supports full chip erase.
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