(China (Mainland))
Product Summary
The LH28F008BVT-BTL10 is a high-performance 8M (8,388,608 bit) memory organized at 1M (1,048,576 bytes) of 8 bits each. Sixteen 64K (65,536 Byte) blocks are included on the LH28F008BVT-BTL10. A memory map is shown in Figure 4 of this specification. A block erase operation erases one of the sixteen blocks of memory in typically 1.6 seconds, independent of the remaining blocks. Each block can be independently erased and written 100,000 cyles. Erase Suspend mode allows system software to suspend block erase to read data or execute code from any other block of the LH28F008BVT-BTL10.
Parametrics
LH28F008BVT-BTL10 absolute maximum ratings: (1)Operating Temperature During Read: 0°C to +70°C; (2)During Block Erase/Byte Write: 0°C to +70°C; (3)Temperature Under Bias: -10°C to +80°C; (4)Storage Temperature: -65°C to +125°C; (5)Voltage on Any Pin (except VCC and VPP)with Respect to GND: -2.0 V to +7.0 V; (6)VPP Program Voltage with Respect to GND during Block Erase/Byte Write: -2.0 V to +14.0 V; (7)VCC Supply Voltage with Respect to GND: -2.0 V to +7.0 V; (8)Output Short Circuit Current: 100 mA.
Features
LH28F008BVT-BTL10 features: (1)Very High-Performance Read: 85 ns Maximum Access Time; (2)High-Density Symmetrically Blocked Architecture: Sixteen 64K Blocks; (3)Extended Cycling Capability: 100,000 Block Erase Cycles; 1.6 Million Block Erase Cycles per Chip; (4)Automated Byte Write and Block Erase: Command User Interface; Status Register; (5)System Performance Enhancements: RYÊ»/BYÊ» Status Output; Erase Suspend Capability; (6)Deep-Powerdown Mode: 0.20 μA ICC Typical.
Diagrams
