(China (Mainland))
Product Summary
The KSH3055TF is a general purpose amplifier low speed switching applications D-PAK for surface mount applications.
Parametrics
KSH3055TF absolute maximum ratings: (1)Collector-Base Voltage: 70 V; (2)Collector-Emitter Voltage: 60 V; (3)Emitter-Base Voltage: 5 V; (4)Collector Current: 10 A; (5)Base Current: 6 A; (6)Collector Dissipation (TC=25°C): 20 W; (7)Collector Dissipation (Ta=25°C): 1.75 W; (8)Junction Temperature: 150 °C; (9)Storage Temperature: - 55 ~ 150 °C.
Features
KSH3055TF features: (1)Lead Formed for Surface Mount Applications (No Suffix); (2)Straight Lead (I-PAK, “ -I “ Suffix); (3)Electrically Similar to Popular KSE3055T; (4)DC Current Gain Specified to 10A; (5)High Current Gain - Bandwidth Product: fT = 2MHz (MIN), IC = 500mA.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 KSH3055TF |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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KSH30 |
Other |
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Data Sheet |
Negotiable |
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KSH3055 |
Other |
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Data Sheet |
Negotiable |
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KSH3055I |
Fairchild Semiconductor |
Transistors Switching (Resistor Biased) DISC BY MFG 2/02 |
Data Sheet |
Negotiable |
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KSH3055ITU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial |
Data Sheet |
Negotiable |
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KSH3055TF |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Epitaxial Sil |
Data Sheet |
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KSH3055TM |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor Epitaxial |
Data Sheet |
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