(China (Mainland))
Product Summary
The irf7601tr is a Power MOSFET. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
irf7601tr absolute maximum ratings: (1)ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V: 5.7 A; (2)ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V: 4.6 A ; (3)IDM Pulsed Drain Current: 30 A; (4)PD @TA = 25°C Power Dissipation: 1.8 W; (5)Linear Derating Factor: 14 mW/°C; (6)VGS Gate-to-Source Voltage: ± 12 V; (7)dv/dt Peak Diode Recovery dv/dt: 5.0 V/ns; (8)TJ, TSTG Junction and Storage Temperature Range: -55 to + 150 °C.
Features
irf7601tr features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)N-ChanneMOSFET; (4)Very SmalSOIC Package; (5)Low Profile (<1.1mm); (6)Available in Tape & Reel; (7)Fast Switching.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRF7601TR |
|
MOSFET N-CH 20V 5.7A MICRO8 |
Data Sheet |
Negotiable |
|
||||||||||||
 |
IRF7601TRPBF |
International Rectifier |
MOSFET MOSFT 20V 5.7A 35mOhm 14nC Micro 8 |
Data Sheet |
|
|
||||||||||||
