Product Summary

The hm5117405bts6 is a CMOS dynamic RAM organized 4,194,304-word × 4-bit. The hm5117405bts6 employs the most advanced CMOS technology for high performance and low power. The hm5117405bts6 offers Extended Data Out (EDO) Page Mode as a high speed access mode. The hm5117405bts6 has package variations of standard 26-pin plastic SOJ and standard 26-pin plastic TSOP II.

Parametrics

hm5117405bts6 absolute maximum ratings: (1)Supply voltage relative to VSS VCC: –1.0 to +7.0 V; (2)Short circuit output current Iout: 50 mA; (3)Power dissipation PT: 1.0 W; (4)Operating temperature Topr: 0 to +70 °C; (5)Storage temperature Tstg: –55 to +125 °C.

Features

hm5117405bts6 features: (1)Single 5 V (±10%); (2)Access time: 50 ns/60 ns/70 ns (max); (3)EDO page mode capability; (4)Long refresh period : 128 ms (L-version); (5)3 variations of refresh.

Diagrams

hm5117405bts6 pin connection