(China (Mainland))
Product Summary
The FDS6912A is an N-Channel Logic Level MOSFET produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. The FDS6912A is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Parametrics
FDS6912A absolute maximum ratings: (1)Drain-Source Voltage: 30 V; (2)Gate-Source Voltage: ±20 V; (3)Drain Current: Continuous: 6 A, Pulsed: 20 A; (4)Power Dissipation for Single Operation PD: 2 W; (Note 1b): 1.6W; (Note 1c): 0.9W; (5)Operating and Storage Junction Temperature Range: -55 to +150 ℃.
Features
FDS6912A features: (1)6 A, 30 V. RDS(ON) = 0.028 W @ VGS = 10 V, RDS(ON) = 0.035 W @ VGS = 4.5 V.; (2)Fast switching speed; (3)Low gate charge (typical 9 nC); (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDS6912A |
Fairchild Semiconductor |
MOSFET SO-8 DUAL N-CH 30V |
Data Sheet |
Negotiable |
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FDS6912A_Q |
Fairchild Semiconductor |
MOSFET Dual N-Channel 30V |
Data Sheet |
Negotiable |
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