Product Summary
The br24l01afvm-wtr is a 128×8 bit electrically erasable PROM. Application is general purpose.
Parametrics
br24l01afvm-wtr absolute maximum ratings: (1)Supply voltage −0.3 to +6.5 V; (2)Power dissipation DIP8: 800 mW; (3)Power dissipation SOP8: 450 mW; (4)Power dissipation SOP-J8: 450 mW; (5)Power dissipation SSOP-B8: 300 mW; (6)Power dissipation MSOP8: 310 mW; (7)Storage temperature: −65 to +125 °C; (8)Operating temperature: −40 to +85 °C; (9)Terminal voltage: −0.3 to VCC+0.3 V.
Features
br24l01afvm-wtr features: (1)128 registers × 8 bits serial architecture; (2)Single power supply (18V to 55V); (3)Two wire serial interface; (4)Self-timed write cycle with automatic erase; (5)8 byte page write mode; (6)Small package: DIP8 / SOP8 / SOP-J8 / SSOP-B8 / MSOP-8; (7)High reliability EEPROM with Double-Cell Structure; (8)High reliability fine pattern CMOS technology; (9)Endurance : 1,000,000 erase / write cycles; (10)Data retention : 40 years; (11)Filtered inputs in SCL•SDA for noise suppression; (12)Initial data FFh in all address.
Diagrams
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![]() BR24L01AFVM-WTR |
![]() ROHM Semiconductor |
![]() EEPROM IC EEPROM SRL 128X8BIT |
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![]() BR246-320A2-28V-024M |
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![]() RELAY GEN PURPOSE DPDT 10A 28V |
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![]() BR246-320B2-28V-023M |
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![]() RELAY GEN PURPOSE DPDT 10A 28V |
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![]() BR246D-320B1-28V-020M |
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![]() RELAY GEN PURPOSE DPDT 10A 28V |
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![]() BR246D-320B3-28V-026M |
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![]() RELAY GEN PURPOSE DPDT 10A 28V |
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![]() BR2477A/FBN |
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![]() Coin Cell Battery 3V 1000mAh 2 Pin Flat Mount |
![]() Data Sheet |
![]() Negotiable |
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![]() BR2477A/GAN |
![]() Panasonic Battery |
![]() Coin Cell Battery 3V 1000mAh 3 Pin Horz, Through Hole |
![]() Data Sheet |
![]() Negotiable |
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