Product Summary
The BCR08PN is an NPN/PNP silicon digital transistor array.
Parametrics
BCR08PN absolute maximum ratings: (1)Collector-emitter voltage, VCEO: 50 V; (2)Collector-base voltage, VCBO: 50 V; (3)Emitter-base voltage, VEBO: 5 V; (4)Input on Voltage, Vi(on): 10 V; (5)DC collector current, IC: 100 mA; (6)Total power dissipation, TS = 115 °C, Ptot: 250 mW; (7)Junction temperature, Tj: 150 °C; (8)Storage temperature, Tstg: -65 to 150 °C; (9)Junction - soldering point, RthJS: ≤140 K/W.
Features
BCR08PN features: (1)Switching circuit, inverter, interface circuit, driver circuit; (2)Two (galvanic)internal isolated NPN/PNP transistors in one package; (3)Built in bias resistor (R1=2.2kΩ, R2=47kΩ).
Diagrams
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![]() BCR08AM-12A#B00 |
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![]() TRIAC 600V 8A TO-92 |
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![]() BCR08AM-14 |
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![]() BCR08AM-14A-A6#B00 |
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![]() TRIAC 700V TO-92 |
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![]() BCR08AS |
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![]() BCR08AS-8 |
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![]() BCR08PN |
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![]() Negotiable |
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