Product Summary
The bcp69t1g is a PNP Silicon Epitaxial Transistor. The bcp69t1g is designed for use in low voltage, high current applications. The bcp69t1g is housed in the SOT-223 package, which is designed for medium power surface mount applications.
Parametrics
bcp69t1g absolute maximum ratings: (1) Collector-Emitter Voltage VCEO: -20V; (2) Collector-Base Voltage VCBO: -25V; (3) Emitter-Base Voltage VEBO: -5V; (4) Collector Current Ic: -1.0A; (5) Total Power Dissipation @ TA=25°C, Derate above 25°C, PD: 1/5W, 12mW/°C; (6) Operating and Storage Temperature Range Tj, Tstg: -65 to +150°C.
Features
bcp69t1g features: (1) High Current: IC= 1.0 A; (2) The SOT-223 Package can be soldered using wave or reflow; (3) SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die; (4) NPN Complement is BCP68; (5) Pb-Free Package is Available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||
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BCP69T1G |
ON Semiconductor |
Transistors Bipolar (BJT) 1A 20V PNP |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||
BCP68 |
Fairchild Semiconductor |
Transistors Bipolar (BJT) SOT-223 NPN GP AMP |
Data Sheet |
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BCP68 T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE-7 |
Data Sheet |
Negotiable |
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BCP68,115 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE-7 |
Data Sheet |
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BCP68_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) SOT-223 NPN GP AMP |
Data Sheet |
Negotiable |
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BCP6810TA |
Diodes Inc. / Zetex |
Transistors Bipolar (BJT) - |
Data Sheet |
Negotiable |
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BCP6810TC |
Diodes Inc. / Zetex |
Transistors Bipolar (BJT) - |
Data Sheet |
Negotiable |
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