Product Summary

The bc817upn is an NPN/PNP silicon transistor array.

Parametrics

bc817upn absolute maximum ratings: (1) Collector-emitter voltage VCEO: 45V; (2) Collector-base voltage VCBO: 50V; (3) Emitter-base voltage VEBO: 5V; (4) DC collector current IC: 500nA; (5) Peak collector current ICM: 1A; (6) Base current IB: 100mA; (7) Peak base current IBM: 200mA; (8) Total power dissipation, Ts= 115°C: 330mW; (9) Junction temperature Tj: 150°C; (10) Storage temperature: -65 to 150°C.

Features

bc817upn features: (1) For AF input stages and driver applications; (2) High current gain; (3) Low collector-emitter saturation voltage; (4) Two (galvanic) internal isolated NPN/PNP Transistors in one package.

Diagrams

bc817upn circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BC817UPN
BC817UPN
Other

Data Sheet
Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BC817
BC817
Rectron
Transistors Bipolar (BJT) Gen Pur Trans NPN,0.8A,45V
Data Sheet
0-3000: $0.04
3000-6000: $0.03
6000-12000: $0.03
BC817 /T3
BC817 /T3
NXP Semiconductors
Transistors Bipolar (BJT) TRANS GP TAPE-13
Data Sheet
Negotiable 
BC817,215
BC817,215
NXP Semiconductors
Transistors Bipolar (BJT) TRANS GP TAPE-7
Data Sheet
0-1: $0.03
1-25: $0.01
25-100: $0.01
100-250: $0.01
BC817,235
BC817,235
NXP Semiconductors
Transistors Bipolar (BJT) TRANS GP TAPE-13
Data Sheet
0-1: $0.03
1-25: $0.01
25-100: $0.01
100-250: $0.01
BC81716
BC81716
Other

Data Sheet
Negotiable 
BC817-16
BC817-16
Taiwan Semiconductor
Transistors Bipolar (BJT) Transistor 300mW
Data Sheet
0-3000: $0.02
3000-6000: $0.02