TPC8104

TPC8104, Silicon P Channel MOS Type (High Speed U-MOSII) Effect Transistor, 30 V, 20 kΩ, 5 A, 1.0 W, SOP

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Price:: US $0.35~0.35 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 22567 :	0.35 / Piece

PartNumber:: TPC8104

Brand:: Toshiba Semiconductor - Toshiba | Pack: | D/C: 08+

Availability:: Supply Ability: 3/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-06-18

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Part Number:TPC8104
US $0.35 - 0.35
Quantity:

piece

Product Summary

The TPC8104 is a Silicon P Channel MOS Type (High Speed U-MOSII) Effect Transistor. Applications are (1)Lithium Ion Battery Applications; (2)Notebook PC Applications; (3)Portable Equipment Applications.

Parametrics

TPC8104 absolute maximum ratings: (1)Drain-source voltage VDSS: -30 V; (2)Drain-gate voltage (RGS = 20 kΩ)VDGR: -30 V; (3)Gate-source voltage VGSS: ±20 V; (4)Drain current DC (Note 1)ID: -5 A; (5)Drain current Pulse (Note 1)IDP: -20 A; (6)Drain power operation dissipation (t = 10 s)(Note 2a): 2.4 W; (7)Drain power dissipation (t = 10 s)(Note 2b)Single-device operation (Note 3a)PD (1): 1.0 W; (8)Single pulse avalanche energy (Note 4)EAS: 32.5 mJ; (9)Avalanche current IAR: -5 A; (10)Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)EAR: 0.24 mJ; (11)Channel temperature Tch: 150 °C; (12)Storage temperature range Tstg: -55 to 150 °C.

Features

TPC8104 features: (1)Small footprint due to small and thin package; (2)High speed switching; (3)Small gate charge : Qg = 17 nC (typ.); (4)Low drain-source ON resistance : RDS (ON)= 38 mΩ (typ.); (5)High forward transfer admittance : |Yfs| = 7.0 S (typ.); (6)Low leakage current : IDSS = -10 μA (max)(VDS = -30 V); (7)Enhancement-mode : Vth = -0.8~-2.0 V (VDS = -10 V, ID = -1 mA).