Product Summary
The SI7901EDN-T1 is a dual p-channel 20-V (D-S) MOSFET. Applications is bidirectional switch.
Parametrics
SI7901EDN-T1 absolute maximum ratings: (1)Drain-Source Voltage: –20 V; (2)Gate-Source Voltage: ±12 V; (3)Continuous Drain Current TA = 25℃: –4.3 A; (4)Continuous Drain Current TA = 85℃: –3.1 A; (5)Pulsed Drain Current: –20 A; (6)Continuous Source Current (Diode Conduction): –1.1 A; (7)Continuous Drain Current TA = 25℃: 1.3 W; (8)Maximum Power Dissipationa TA = 85℃: 0.7 W; (9)Operating Junction and Storage Temperature Range: –55 to 150 ℃.
Features
SI7901EDN-T1 features: (1)Trench FET Power MOSFETS: 1.8-V Rated; (2)ESD Protected: 4500 V; (3)Ultra-Low Thermal Resistance, PowerPAK Package with Low 1.07-mm Profile.
Diagrams

| Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
![]() |
![]() SI7901EDN-T1 |
![]() Vishay/Siliconix |
![]() MOSFET 20V 6.3A 1.3W |
![]() Data Sheet |
![]() Negotiable |
|
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![]() |
![]() SI7901EDN-T1-E3 |
![]() Vishay/Siliconix |
![]() MOSFET 20V 6.3A 2.8W 48mohm @ 4.5V |
![]() Data Sheet |
![]() Negotiable |
|
||||
![]() |
![]() SI7901EDN-T1-GE3 |
![]() Vishay/Siliconix |
![]() MOSFET 20V 6.3A 2.8W 48mohm @ 4.5V |
![]() Data Sheet |
![]() Negotiable |
|
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(China (Mainland))









