Product Summary

The SI7901EDN-T1 is a dual p-channel 20-V (D-S) MOSFET. Applications is bidirectional switch.

Parametrics

SI7901EDN-T1 absolute maximum ratings: (1)Drain-Source Voltage: –20 V; (2)Gate-Source Voltage: ±12 V; (3)Continuous Drain Current TA = 25℃: –4.3 A; (4)Continuous Drain Current TA = 85℃: –3.1 A; (5)Pulsed Drain Current: –20 A; (6)Continuous Source Current (Diode Conduction): –1.1 A; (7)Continuous Drain Current TA = 25℃: 1.3 W; (8)Maximum Power Dissipationa TA = 85℃: 0.7 W; (9)Operating Junction and Storage Temperature Range: –55 to 150 ℃.

Features

SI7901EDN-T1 features: (1)Trench FET Power MOSFETS: 1.8-V Rated; (2)ESD Protected: 4500 V; (3)Ultra-Low Thermal Resistance, PowerPAK Package with Low 1.07-mm Profile.

Diagrams

SI7901EDN-T1 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
SI7901EDN-T1
SI7901EDN-T1

Vishay/Siliconix

MOSFET 20V 6.3A 1.3W

Data Sheet

Negotiable 
SI7901EDN-T1-E3
SI7901EDN-T1-E3

Vishay/Siliconix

MOSFET 20V 6.3A 2.8W 48mohm @ 4.5V

Data Sheet

Negotiable 
SI7901EDN-T1-GE3
SI7901EDN-T1-GE3

Vishay/Siliconix

MOSFET 20V 6.3A 2.8W 48mohm @ 4.5V

Data Sheet

Negotiable