(China (Mainland))
Product Summary
The SI7840DP-T1-E3 is an N-channel 30-V (D-S) fast switching MOSFET . Applications are (1)DC/DC converters; (2)Optimized for “high-side” synchronous rectifier operation.
Parametrics
SI7840DP-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage: 30 V; (2)Gate-Source Voltage: ±20 V; (3)Continuous Drain Current TA = 25℃: 11 A; (4)Continuous Drain Current TA = 70℃: 8 A; (5)Pulsed Drain Current: 40 A; (6)Continuous Source Current (Diode Conduction): 1.6 A; (7)Continuous Drain Current TA = 25℃: 1.9 W; (8)Maximum Power Dissipationa TA = 70℃: 1.2 W; (9)Operating Junction and Storage Temperature Range: –55 to 150 ℃.
Features
SI7840DP-T1-E3 features: (1)Trench FET power MOSFET; (2)New low thermal resistance power PAK package with low 1.07-mm profile.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 SI7840DP-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 18A 5W |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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Si7802DN |
Other |
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Data Sheet |
Negotiable |
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SI7802DN-T1-E3 |
Vishay/Siliconix |
MOSFET 250V 1.95A 3.8W 435mohm @ 10V |
Data Sheet |
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SI7802DN-T1-GE3 |
Vishay/Siliconix |
MOSFET 250V 1.95A 3.8W 435mohm @ 10V |
Data Sheet |
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Si7804DN |
Other |
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Data Sheet |
Negotiable |
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SI7804DN-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 10A 0.0185Ohm |
Data Sheet |
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SI7804DN-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 10A 3.5W 18.5mohm @ 10V |
Data Sheet |
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