(China (Mainland))
Product Summary
The M29F040B70N6 is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. The M29F040B70N6 operation can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F040B70N6 is fully backward compatible with the M29F040.
Parametrics
M29F040B70N6 absolute maximum ratings: (1)Ambient Operating Temperature (Temperature Range Option 1): 0 to 70 °C; (2)Ambient Operating Temperature (Temperature Range Option 6): –40 to 85 °C; (3)Ambient Operating Temperature (Temperature Range Option 3): –40 to 125 °C; (4)Temperature Under Bias: –50 to 125 °C; (5)Storage Temperature: –65 to 150 °C; (6)Input or Output Voltage: –0.6 to 6 V; (7)upply Voltage: –0.6 to 6 V; (8)Identification Voltage: –0.6 to 13.5 V.
Features
M29F040B70N6 features: (1)Single 5V ± 10% supply voltage for program, erase and read operations; (2)Access time: 45ns; (3)Programming time – 8 μs per Byte typical; (4)8 uniform 64 kbytes memory blocks; (5)Program/erase controller – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits; (6)Erase suspend and resume modes – Read and Program another Block during Erase Suspend.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 M29F040B70N6 |
STMicroelectronics |
Flash 4M (512Kx8) 70ns |
Data Sheet |
Negotiable |
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M29F040B70N6E |
STMicroelectronics |
Flash STD FLASH 4 MEG |
Data Sheet |
Negotiable |
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