IRFD210

IRFD210, N-Channel Power MOSFET, 0.6A, 200V, 1.0 W, 30 mJ, DIP

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Price:: US $1.00~1.00 / piece [Get Latest Price]

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1 ~ 10000 :	1.00 / Piece

PartNumber:: IRFD210

Brand:: International Rectifier - IR | Pack: DIP | D/C: 05+

Availability:: Supply Ability: 4/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-06-24

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Part Number:IRFD210
US $1.00 - 1.00
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piece

Product Summary

The IRFD210 is an 0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET. This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. The IRFD210 is N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulator, switching converter, motor driver, relay driver, and drivers for high power bipolar switching transistor requiring high speed and low gate drive power. The IRFD210 can be operated directly from integrated circuits.

Parametrics

IRFD210 absolute maximum ratings: (1)Drain to Source Voltage (Note 1): 200 V; (2)Drain to Gate Voltage (RGS = 20kW)(Note 1): 200 V; (3)Continuous Drain Current.: 0.6 A; (4)Pulsed Drain Current: 2.5 A; (5)Gate to Source Voltage: ±20 V; (6)Maximum Power Dissipation: 1.0 W; (7)Linear Derating Factor (See Figure 1): 0.008 W/℃:; (8)Single Pulse Avalanche Energy Rating (Note 3): 30 mJ; (9)Operating and Storage Temperature: -55 to 150 ℃; (10)Maximum Temperature for Soldering Leads at 0.063in (1.6mm)from Case for 10s: 300 ℃; (11)Maximum Temperature for Soldering Package Body for 10s, See Techbrief 334: 260 ℃.

Features

IRFD210 features: (1)0.6A, 200V; (2)rDS(ON)= 1.500Ω; (3)Single Pulse Avalanche Energy Rated; (4)SOA is Power Dissipation Limited; (5)Nanosecond Switching Speeds; (6)Linear Transfer Characteristics; (7)High Input Impedance.