Product Summary

The IRF7104TRPBF is a Fourth Generation HEXFET. The IRF7104TRPBF from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

Parametrics

IRF7104TRPBF absolute maximum ratings: (1)ID @ TA = 25°C Continuous Drain Current, VGS @ 10V: -2.3A; (2)ID @ TA = 70°C Continuous Drain Current, VGS @ 10V: -1.8A; (3)IDM Pulsed Drain Current: -10A; (4)PD @TC = 25°C Power Dissipation: 2.0W; (5)Linear Derating Factor: 0.016 W/°C; (6)VGS Gate-to-Source Voltage: ± 12 V; (7)dv/dt Peak Diode Recovery dv/dt: -3.0 V/nS; (8)TJ, TSTG Junction and Storage Temperature Range: -55 to + 150°C.

Features

IRF7104TRPBF features: (1)Adavanced Process Technology; (2)Ultra Low On-Resistance; (3)DuaP-ChanneMOSFET; (4)Surface Mount; (5)Available in Tape & Reel; (6)Dynamic dv/dt Rating; (7)Fast Switching.

Diagrams

IRF7104TRPBF pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF7104TRPBF
IRF7104TRPBF
International Rectifier
MOSFET MOSFT DUAL PCh -20V 2.3A
Data Sheet
0-1: $0.67
1-25: $0.39
25-100: $0.24
100-250: $0.23
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
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Data Sheet
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730-1000: $0.76
1000-2000: $0.74
2000-5000: $0.73
IRF710, SiHF710
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Data Sheet
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IRF7101
International Rectifier
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Data Sheet
1-570: $0.45
IRF7101PBF
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0-1: $0.68
1-25: $0.40
25-100: $0.24
100-250: $0.23
IRF7101TR
IRF7101TR
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Data Sheet
1-4000: $0.41