Product Summary
The IR2121PBF is a high speed power MOSFET and IGBT driver with over-current limiting protection circuitry. Latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The IR2121PBF features a high pulse current buffer stage designed for minimum cross-conduction. The protection circuitry detects over-current in the driven power transistor and limits the gate drive voltage. Cycle-by-cycle shutdown is programmed by an external capacitor which directly controls the time interval between detection of the over-current limiting condition and latched shutdown.
Parametrics
IR2121PBF absolute maximum ratings: (1)Fixed Supply Voltage: -0.3 to 25 V; (2)Gate Drive Return Voltage: VCC - 25 to VCC + 0.3 V; (3)Output Voltage: VS - 0.3 to VCC + 0.3 V; (4)Logic Input Voltage: -0.3 to VCC + 0.3 V; (5)Error Signal Voltage: -0.3 to VCC + 0.3 V; (6)Current Sense Voltage: VS - 0.3 to VCC + 0.3 V; (7)Package Power Dissipation TA ≤ +25°C: 1.0 W; (8)Thermal Resistance, Junction to Ambient: 125 °C/W; (9)Junction Temperature: 150 °C; (10)Storage Temperature: -55 to 150 °C; (11)Lead Temperature (Soldering, 10 seconds): 300 °C.
Features
IR2121PBF features: (1)Gate drive supply range from 12 to 18V; (2)Undervoltage lockout; (3)Current detectioand limiting loop to limit drivepower transistor current; (4)Error lead indicates fault conditions and programs shutdowtime; (5)Output iphase with input.
Diagrams

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![]() IR2121PBF |
![]() International Rectifier |
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(China (Mainland))












