FW82443BX

FW82443BX, n-channel mosfet, 500 V, 1.6 A, 2.6Ω, BGA

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Price:: US $25.00~25.00 / piece [Get Latest Price]

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1 ~ 1000 :	25.00 / Piece

PartNumber:: FW82443BX

Brand:: Intel Corporation - Intel | Pack: BGA | D/C: 08+

Availability:: Supply Ability: 4/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-06-18

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Part Number:FW82443BX
US $25.00 - 25.00
Quantity:

piece

Product Summary

The FW82443BXis a 500v n-channel mosfet. The FW82443BX N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provides superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The device is well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.

Parametrics

FW82443BX absolute maximum ratings: (1)VDSS Drain-Source Voltage: 500 V; (2)ID Drain Current - Continuous (TC = 25°C): 2.5 A - Continuous (TC = 100°C): 1.6 A; (3)IDM Drain Current - Pulsed (Note 1): 8.0 A; (4)VGSS Gate-Source Voltage : ± 30 V; (5)EAS Single Pulsed Avalanche Energy (Note 2): 200 mJ; (6)IAR Avalanche Current (Note 1): 2.5 A; (7)EAR Repetitive Avalanche Energy (Note 1): 4.9 mJ; (8)dv/dt Peak Diode Recovery dv/dt (Note 3): 5.5 V/ns; (9); (10)TJ , Tstg Operating and Storage Temperature Range: -55 to +150 °C; (11)TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 °C.

Features

FW82443BX features: (1)2.5A, 500V, RDS(on)= 2.6 @VGS = 10 V; (2)Low gate charge ( typical 14 nC); (3)Low Crss ( typical 10 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capabilit.