(China (Mainland))
Product Summary
The BSC022N03S is an opti MOS power-transistor.
Parametrics
BSC022N03S maximum ratings: (1)Continuous drain current, I D at T C=25 ℃: 100 A; at T C=100 ℃: 100A; at T A=25 ℃, RthJA=45 K/W2): 28A; (2)Pulsed drain current, ID,pulse T C=25 ℃: 200A; (3)Avalanche energy, single pulse, EAS, ID=50 A, R GS=25 Ω: 800 mJ; (4)Reverse diode dv /dt, dv /dt, at ID=50 A, VDS=24 V, di /dt =200 A/μs, T j,max=150 ℃: 6 kV/μs; (5)Gate source voltage, VGS: ±20 V; (6)Power dissipation, Ptot, at TC=25 ℃: 104 W; at T A=25 ℃, R thJA=45 K/W2): 2.8w; (7)Operating and storage temperature, T j, Tstg: -55 to 150 ℃; (8)IEC climatic category; DIN IEC 68-1: 55/150/56.
Features
BSC022N03S features: (1)Fast switching MOSFET for SMPS; (2)Optimized technology for notebook DC/DC converters; (3)Qualified according to JEDEC1 for target applications; (4)Logic level / N-channel; (5)Excellent gate charge x R DS(on) product (FOM); (6)Very low on-resistance R DS(on); (7)Superior thermal resistance; (8)Avalanche rated; (9)dv /dt rated; (10)Pb-free lead plating; RoHS compliant.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 BSC022N03S |
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MOSFET N-CH 30V 50A TDSON-8 |
Data Sheet |
Negotiable |
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BSC022N03S G |
Infineon Technologies |
MOSFET N-CH 30V 28A |
Data Sheet |
Negotiable |
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 |
BSC022N03SG |
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MOSFET N-CH 30V 100A TDSON-8 |
Data Sheet |
Negotiable |
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