(China (Mainland))
Product Summary
The si4936ady-t1-e3 is a dual n-channel MOSFET.
Parametrics
si4936ady-t1-e3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: 20V; (3)Continuous Drain Current (TJ = 150°C)TA = 25°C ID: 5.9 A, TA = 70°C: 4.7A; (4)Pulsed Drain Current IDM: 30A; (5)Continuous Source Current (Diode Conduction)a IS: 1.7A; (6)Maximum Power Dissipationa TA = 25°C PD: 2.0 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: -55 to 150°C.
Features
si4936ady-t1-e3 feature: (1)TrenchFET Power MOSFET.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 SI4936ADY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 5.9A 2W |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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Si4900DY |
Other |
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Data Sheet |
Negotiable |
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SI4900DY-T1-E3 |
Vishay/Siliconix |
MOSFET 60V 5.3A 3.1W |
Data Sheet |
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SI4900DY-T1-GE3 |
Vishay/Siliconix |
MOSFET 60V 5.3A 3.1W 58mohm @ 10V |
Data Sheet |
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Si4904DY |
Other |
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Data Sheet |
Negotiable |
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SI4904DY-T1-E3 |
Vishay/Siliconix |
MOSFET 40V 8.0A 3.25W |
Data Sheet |
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SI4904DY-T1-GE3 |
Vishay/Siliconix |
MOSFET 40V 8.0A 3.25W 16mohm @ 10V |
Data Sheet |
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