Product Summary

The IRFR310B is a 400V N-channel MOSFET.

Parametrics

IRFR310B absolute maximum ratings: (1)Drain-source voltage, VDS: 400V; (2)Gate-source voltage, VGS: ±20V; (3)Continuous drain current, ID: 2.7A; (4)Pulsed drain current, IDM: 6.0A; (5)Linear derating factor: 0.2W/℃; (6)single pulse avalanche energy, EAS: 86mJ; (7)Repetitive avalanche current, IAR:1.7A; (8)Repetitive avalanche energy, EAR: 2.5mJ; (9)Maximum power dissipation, PD: 25W; (10)Peak diode recovery dV/dtC: 4.0V/ns; (11)Operating junction and storage temperature range, TJ, TSTG: -55 to +150℃.

Features

IRFR310B features: (1)Dynamic dV/dt rating; (2)Repetitive avalanche rated; (3)Surface mount; (4)Straight lead; (5)Available in Tape and Reel; (6)Fast switching; (7)Fully avalanche rated; (8)Lead Pb-free available.

Diagrams

IRFR310B pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRFR310B
IRFR310B

Other


Data Sheet

Negotiable 
IRFR310BTF
IRFR310BTF

Fairchild Semiconductor

MOSFET 400V N-Channel B-FET

Data Sheet

Negotiable 
IRFR310BTM
IRFR310BTM

Fairchild Semiconductor

MOSFET 400V N-Channel B-FET / Substitute of IRFR310 & IRFR310A

Data Sheet

Negotiable