Product Summary
The IRFR310B is a 400V N-channel MOSFET.
Parametrics
IRFR310B absolute maximum ratings: (1)Drain-source voltage, VDS: 400V; (2)Gate-source voltage, VGS: ±20V; (3)Continuous drain current, ID: 2.7A; (4)Pulsed drain current, IDM: 6.0A; (5)Linear derating factor: 0.2W/℃; (6)single pulse avalanche energy, EAS: 86mJ; (7)Repetitive avalanche current, IAR:1.7A; (8)Repetitive avalanche energy, EAR: 2.5mJ; (9)Maximum power dissipation, PD: 25W; (10)Peak diode recovery dV/dtC: 4.0V/ns; (11)Operating junction and storage temperature range, TJ, TSTG: -55 to +150℃.
Features
IRFR310B features: (1)Dynamic dV/dt rating; (2)Repetitive avalanche rated; (3)Surface mount; (4)Straight lead; (5)Available in Tape and Reel; (6)Fast switching; (7)Fully avalanche rated; (8)Lead Pb-free available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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IRFR310B |
Other |
Data Sheet |
Negotiable |
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IRFR310BTF |
Fairchild Semiconductor |
MOSFET 400V N-Channel B-FET |
Data Sheet |
Negotiable |
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IRFR310BTM |
Fairchild Semiconductor |
MOSFET 400V N-Channel B-FET / Substitute of IRFR310 & IRFR310A |
Data Sheet |
Negotiable |
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