(China (Mainland))
Product Summary
The hat1044m-el-e is a Silicon P Channel Power MOS FET Power Switching.
Parametrics
hat1044m-el-e absolute maximum ratings: (1)Drain to source voltage VDSS: –30 V; (2)Gate to source voltage VGSS: ±20 V; (3)Drain current ID Note 2: –4.5 A; (4)Drain peak current ID (pulse)Note 1:–18 A; (5)Body-drain diode reverse drain current IDR Note 2: –4.5 A; (6)Channel dissipation Pch (pulse)Note 2: 2.0 W; (7)Channel dissipation Pch (continuous)Note 3: 1.05 W; (8)Channel temperature Tch: 150 °C; (9)Storage temperature Tstg: –55 to +150 °C.
Features
hat1044m-el-e features: (1)Low on-resistance; (2)Low drive current; (3)High density mounting; (4)4.5 V gate drive device can be driven from 5 V source .
Diagrams
