Product Summary

The bsc059n03sg is a Power-Transistor.

Parametrics

bsc059n03sg absolute maximum ratings: (1)Continuous drain current: 73 A; (2)Pulsed drain current: 200 A; (3)Avalanche energy, single pulse: 150 mJ; (4)Gate source voltage: ±20 V; (5)Power dissipation: 48 W; (6)Operating and storage temperature: -55 to 150 ℃.

Features

bsc059n03sg features: (1)Fast switching MOSFET for SMPS; (2)Optimized technology for notebook DC/DC converters; (3)Qualified according to JEDEC1 for target applications; (4)Logic level / N-channel; (5)Excellent gate charge x RDS(on) product (FOM); (6)Very low on-resistance RDS(on); (7)Superior thermal resistance; (8)Avalanche rated; dv/dt rated; (9)Pb-free lead plating; RoHS compliant; (10)Halogen-free according to IEC61249-2-21.

Diagrams

bsc059n03sg dimension