(China (Mainland))
Product Summary
The SI4816DY-T1 is a dual n-channel MOSFET.
Parametrics
SI4816DY-T1 absolute maximum ratings: (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: 20V; (3)Pulsed Drain Current IDM: 40 A; (4)Continuous Source Current (Diode Conduction)a IS: 1.3A; (5)Avalanche Currentb L = 0 1 mH IAS: 25A; (6)Single Pulse Avalanche Energyb 0.1 EAS: 31.25 mJ; (7)Maximum Power Dissipationa TA = 25_C PD: 1.25 W; (8)Operating Junction and Storage Temperature Range TJ, Tstg: -55 to 150°C.
Features
SI4816DY-T1 features: (1)little foot plus power MOSFET; (2)100% Rg Tested.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 SI4816DY-T1 |
Vishay/Siliconix |
MOSFET 30V 6.3/10A |
Data Sheet |
Negotiable |
|
||||||||||||
|
SI4816DY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 6.3/10A |
Data Sheet |
Negotiable |
|
||||||||||||
|
SI4816DY-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 6.3/10A 1.4/2.4W 22/13mohm @ 10V |
Data Sheet |
|
|
||||||||||||
