Product Summary
The IRF9952TR is a Power MOSFET. The IRF9952TR utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that IRF9952TR is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRF9952TR absolute maximum ratings: (1)Drain-Source Voltage VDS: 30V; (2)Gate-Source Voltage VGS: ±20V;(3)Continuous Drain Current, ID @ TA = 25℃: 3.5A; (4)Continuous Drain Current,ID @ TA = 70℃: 2.8A; (5) Pulsed Drain Current. IDM: 16A; (6)Junction & Storage Temperature Range TJ, TSTG: –55 to 150℃.
Features
IRF9952TR features: (1) Generation V Technology; (2) Ultra Low On-resistance; (3)Dual N and P Channel MOSFET; (4) Surface Mount; (5)Very Low Gate Charge and Switching Losses; (6)Fully Avalanche Rated.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRF9952TR |
MOSFET N+P 30V 2.3A 8-SOIC |
Data Sheet |
Negotiable |
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IRF9952TRPBF |
International Rectifier |
MOSFET MOSFT DUAL N/PCh 30V 3.5A |
Data Sheet |
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