Product Summary

The IRF9952TR is a Power MOSFET. The IRF9952TR utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that IRF9952TR is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF9952TR absolute maximum ratings: (1)Drain-Source Voltage VDS: 30V; (2)Gate-Source Voltage VGS: ±20V;(3)Continuous Drain Current, ID @ TA = 25℃: 3.5A; (4)Continuous Drain Current,ID @ TA = 70℃: 2.8A; (5) Pulsed Drain Current. IDM: 16A; (6)Junction & Storage Temperature Range TJ, TSTG: –55 to 150℃.

Features

IRF9952TR features: (1) Generation V Technology; (2) Ultra Low On-resistance; (3)Dual N and P Channel MOSFET; (4) Surface Mount; (5)Very Low Gate Charge and Switching Losses; (6)Fully Avalanche Rated.

Diagrams

IRF9952TR circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF9952TR
IRF9952TR


MOSFET N+P 30V 2.3A 8-SOIC

Data Sheet

Negotiable 
IRF9952TRPBF
IRF9952TRPBF

International Rectifier

MOSFET MOSFT DUAL N/PCh 30V 3.5A

Data Sheet

0-1: $0.68
1-25: $0.40
25-100: $0.25
100-250: $0.23