Product Summary

IRF7750 is a HEXFET Power MOSFET from International Rectifier which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for
battery and load management. The TSSOP-8 package of the IRF7750 has 45% less footprint area than the standard SO-8.

Parametrics

IRF7750 absolute maximum ratings: (1)Drain-Source Voltage VDS: -20V; (2)Gate-Source Voltage VGS: ±12V;(3)Continuous Drain Current, VGS @ -4.5V, ID @ TC = 25℃: ±4.7A; (4)Continuous Drain Current, VGS @ -4.5V, ID @ TC = 70℃: ±3.8A; (5) Pulsed Drain Current. IDM: ±38A; (6)Junction & Storage Temperature Range TJ, TSTG: –55 to 150℃.

Features

IRF7750 features: (1)Ultra Low On-Resistance; (2)-1.8V Rated; (3)P-ChanneMOSFET; (4)Very SmalSOIC Package; (5)Low Profile ( < 1.1mm); (6)Available in Tape & Reel.

Diagrams

IRF7750 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF7750
IRF7750


MOSFET 2P-CH 20V 4.7A 8-TSSOP

Data Sheet

Negotiable 
IRF7750GTRPBF
IRF7750GTRPBF

International Rectifier

MOSFET MOSFT DUAL PCh -20V 4.7A

Data Sheet

Negotiable 
IRF7750TRPBF
IRF7750TRPBF

International Rectifier

MOSFET MOSFT DUAL PCh -20V 4.7A

Data Sheet

0-1: $1.18
1-25: $0.72
25-100: $0.50
100-250: $0.47
IRF7750TR
IRF7750TR


MOSFET 2P-CH 20V 4.7A 8-TSSOP

Data Sheet

Negotiable