Product Summary
IRF7750 is a HEXFET Power MOSFET from International Rectifier which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for
battery and load management. The TSSOP-8 package of the IRF7750 has 45% less footprint area than the standard SO-8.
Parametrics
IRF7750 absolute maximum ratings: (1)Drain-Source Voltage VDS: -20V; (2)Gate-Source Voltage VGS: ±12V;(3)Continuous Drain Current, VGS @ -4.5V, ID @ TC = 25℃: ±4.7A; (4)Continuous Drain Current, VGS @ -4.5V, ID @ TC = 70℃: ±3.8A; (5) Pulsed Drain Current. IDM: ±38A; (6)Junction & Storage Temperature Range TJ, TSTG: –55 to 150℃.
Features
IRF7750 features: (1)Ultra Low On-Resistance; (2)-1.8V Rated; (3)P-ChanneMOSFET; (4)Very SmalSOIC Package; (5)Low Profile ( < 1.1mm); (6)Available in Tape & Reel.
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
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![]() IRF7750 |
![]() |
![]() MOSFET 2P-CH 20V 4.7A 8-TSSOP |
![]() Data Sheet |
![]() Negotiable |
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![]() IRF7750GTRPBF |
![]() International Rectifier |
![]() MOSFET MOSFT DUAL PCh -20V 4.7A |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() IRF7750TRPBF |
![]() International Rectifier |
![]() MOSFET MOSFT DUAL PCh -20V 4.7A |
![]() Data Sheet |
![]()
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![]() IRF7750TR |
![]() |
![]() MOSFET 2P-CH 20V 4.7A 8-TSSOP |
![]() Data Sheet |
![]() Negotiable |
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