Product Summary
The IRF7702TR is a HEXFET Power MOSFET from International Rectifier which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package of the IRF7702TR has 45% less footprint area than the standard SO-8.
Parametrics
IRF7702TR absolute maximum ratings: (1)Drain-Source Voltage VDS: -12V; (2)Gate-Source Voltage VGS: ±8V;(3)Continuous Drain Current, VGS @ -4.5V, ID @ TC = 25℃: ±8A; (4)Continuous Drain Current, VGS @ -4.5V, ID @ TC = 70℃: ±7A; (5) Pulsed Drain Current. IDM: ±70A; (6)Junction & Storage Temperature Range TJ, TSTG: –55 to 150℃.
Features
IRF7702TR features: (1)Ultra Low On-Resistance; (2)-1.8V Rated; (3)P-ChanneMOSFET; (4)Very SmalSOIC Package; (5)Low Profile ( < 1.1mm); (6)Available in Tape & Reel.
Diagrams
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![]() IRF7702TR |
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![]() MOSFET P-CH 12V 8A 8-TSSOP |
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![]() IRF7702TRPBF |
![]() International Rectifier |
![]() MOSFET MOSFT PCh -12V -8A 14mOhm 54nC |
![]() Data Sheet |
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