IRF7338TR

IRF7338TR, HEXFET power MOSFET, 12 A, 2.0 W, 8.0 V, SO

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Price:: US $0.63~0.63 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 10000 :	0.63 / Piece

PartNumber:: IRF7338TR

Brand:: International Rectifier - IR | D/C: 11+

Availability:: Supply Ability: 4/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-06-24

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Part Number:IRF7338TR
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Product Summary

The IRF7338TR is a HEXFET power MOSFET. The IRF7338TR from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With the IRF7338TR can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.

Parametrics

IRF7338TR absolute maximum ratings: (1)VDS, drain-to-source voltage: 12, -12 A; (2)ID @ TA = 25°C, continuous drain current, VGS @ 4.5V: 6.3, -3.0 A; (3)ID @ TA = 70°C, continuous drain current, VGS @ 4.5V: 5.2, -2.5 A; (4)IDM, pulsed drain current: 26, -13 A; (5)PD @TA = 25°C, power dissipation: 2.0 W; (6)PD @TA = 70°C, power dissipation: 1.3 W; (7)Linear derating factor: 16 mW/°C; (8)VGS, gate-to-source voltage: ±12, ± 8.0 V; (9)TJ, TSTG, junction and storage temperature range: -55 to 150 °C.