(China (Mainland))
Product Summary
The 2sj527str-e is a Silicon P Channel MOS FET.
Parametrics
2sj527str-e absolute maximum ratings: (1)Drain to source voltage VDSS: –60 V; (2)Gate to source voltage VGSS: ±20 V; (3)Drain current ID: –5 A; (4)Drain peak current ID (pulse)Note 1: –20 A; (5)Body to drain diode reverse drain current IDR: –5 A; (6)Avalanche current IAP Note 3: –5 A; (7)Avalanche energy EAR Note 3: 2.1 mJ; (8)Channel dissipation Pch Note 2: 20 W; (9)Channel temperature Tch: 150 °C; (10)Storage temperature Tstg: –55 to +150 °C .
Features
2sj527str-e features: (1)Low on-resistance RDS (on)= 0.3 Ω typ.; (2)Low drive current; (3)4 V gate drive devices; (4)High speed switching.
Diagrams
