Product Summary

The 2sa1020-y is a kind of Silicon PNP Epitaxial Type Transistor for Power Amplifier and Power Switching Applications.

Parametrics

2sa1020-y absolute maximum ratings: (1)Collector-to-Base Voltage, VCBO: -50 V; (2)Collector-to-Emitter Voltage, VCEO: -50 V; (3)Emitter-to-Base Voltage, VEBO: -5 V; (4)Collector Current, IC: -2 A; (5)Base current, IB: 0.2 A; (6)Collector Dissipation, PC: 900 mW; (7)Junction Temperature, Tj: 150℃; (8)Storage Temperature, Tstg: -55 to +150℃.

Features

2sa1020-y features: (1)Low Collector saturation voltage: VCE (sat) = .0.5 V (max) (IC = .1 A); (2)High collector power dissipation: PC = 900 mW; (3)High-speed switching: tstg = 1.0 us (typ.); (4)Complementary to 2SC2655.

Diagrams

2sa1020-y circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
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2SA1020-Y(TE6,F,M)
2SA1020-Y(TE6,F,M)

Toshiba

Transistors Bipolar (BJT) PNP -50V -2A 900mW

Data Sheet

0-1: $0.12
1-10: $0.10
10-100: $0.08
100-250: $0.08
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(USD)
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2SA1006
2SA1006

Other


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Negotiable 
2SA1006A
2SA1006A

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2SA1006B
2SA1006B

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2SA1008
2SA1008

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2SA1009
2SA1009

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2SA1009A
2SA1009A

Other


Data Sheet

Negotiable