Product Summary
The 2sa1020-y is a kind of Silicon PNP Epitaxial Type Transistor for Power Amplifier and Power Switching Applications.
Parametrics
2sa1020-y absolute maximum ratings: (1)Collector-to-Base Voltage, VCBO: -50 V; (2)Collector-to-Emitter Voltage, VCEO: -50 V; (3)Emitter-to-Base Voltage, VEBO: -5 V; (4)Collector Current, IC: -2 A; (5)Base current, IB: 0.2 A; (6)Collector Dissipation, PC: 900 mW; (7)Junction Temperature, Tj: 150℃; (8)Storage Temperature, Tstg: -55 to +150℃.
Features
2sa1020-y features: (1)Low Collector saturation voltage: VCE (sat) = .0.5 V (max) (IC = .1 A); (2)High collector power dissipation: PC = 900 mW; (3)High-speed switching: tstg = 1.0 us (typ.); (4)Complementary to 2SC2655.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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2SA1020-Y(TE6,F,M) |
Toshiba |
Transistors Bipolar (BJT) PNP -50V -2A 900mW |
Data Sheet |
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2SA1006 |
Other |
Data Sheet |
Negotiable |
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2SA1006A |
Other |
Data Sheet |
Negotiable |
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2SA1006B |
Other |
Data Sheet |
Negotiable |
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2SA1008 |
Other |
Data Sheet |
Negotiable |
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2SA1009 |
Other |
Data Sheet |
Negotiable |
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2SA1009A |
Other |
Data Sheet |
Negotiable |
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