Product Summary

The upc8112t-e3 is a silicon mmic 1st frequency down-converter. The upc8112t-e3 consists of mixer and local amplifier. The mPC8112TB features high impedance output of open collector. The upc8112t-e3 features low impedance output of emitter follower. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to reduce your system size. The upc8112t-e3 is manufactured using NECs 20 GHz fT NESAT silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. Applications are (1)1.5 GHz to 1.9 GHz cellular/cordless telephone (PHS, DECT, PDC1.5G and so on); (2)800 MHz to 900 MHz cellular telephone (PDC800M and so on).

Parametrics

upc8112t-e3 absolute maximum ratings: (1)Supply Voltage VCC TA = +25°C, 5 pin and 6 pin: 3.6 V; (2)Total Circuit Current ICC TA = +25°C: 77.7 mA; (3)Total Power Dissipation PD Mounted on double sided copper clad 1.6 mm epoxy glass PWB (TA = +85°C): 200 mW; (4)Operating Ambient Temperature TA: -40 to +85 °C; (5)Storage Temperature Tstg: -55 to +150 °C.

Features

upc8112t-e3 features: (1)Excellent RF performance : IIP3 = –7 dBm@fRFin = 1.9 GHz (reference), IM3 = –88 dBc@PRFin = –38 dBm, 1.9 GHz (reference); (2)Similar conversion gain to mPC2757 and lower noise figure than mPC2758; (3)Minimized carrier leakage : RFIo = –80 dB@fRFin = 900 MHz (reference), RFIo = –55 dB@fRFin = 1.9 GHz (reference); (4)High linearity : PO (sat)= –2.5 dBm TYP.@fRFin = 900 MHz, PO (sat)= –3 dBm TYP.@fRFin = 1.9 GHz; (5)Low current consumption : ICC = 8.5 mA TYP.; (6)Supply voltage : VCC = 2.7 to 3.3 V; (7)High-density surface mounting : 6-pin super minimold package.

Diagrams

upc8112t-e3 pin connection