MBRA130LT3

MBRA130LT3, metal–to–silicon power rectifier, 30 V, 25 A, 100 kHz, SOP

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Price:: US $0.04~0.04 / piece [Get Latest Price]

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1 ~ 5000 :	0.04 / Piece

PartNumber:: MBRA130LT3

Brand:: ON Semiconductor - ON | Pack: SOP | D/C: 05+

Availability:: Supply Ability: 100/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-11

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Part Number:MBRA130LT3
US $0.04 - 0.04
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Product Summary

The MBRA130LT3 is employing the Schottky Barrier principle in a metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.

Parametrics

MBRA130LT3 absolute maximum ratings: (1)Peak Repetitive Reverse Voltage, Working Peak Reverse Voltage, DC Blocking Voltage: 30 V; (2)Average Rectified Forward Current (At Rated VR, TC = 105°C)IO: 1.0 A; (3)Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 105°C)IFRM: 2.0 A; (4)Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz)IFSM: 25 A; (5)Storage/Operating Case Temperature Tstg, TC: –55 to +150 °C; (6)Operating Junction Temperature TJ: –55 to +125 °C; (7)Voltage Rate of Change (Rated VR, TJ = 25°C)dv/dt: 10,000 V/ms.

Features

MBRA130LT3 features: (1)Compact Package with J–Bend Leads Ideal for Automated Handling; (2)Highly Stable Oxide Passivated Junction; (3)Guardring for Over–Voltage Protection; (4)Low Forward Voltage Drop.