(China (Mainland))
Product Summary
The hn1c01fu-gr is a silicon NPN epitaxial type transistor. Application of the hn1c01fu-gr includes audio frequency general purpose amplifier.
Parametrics
hn1c01fu-gr absolute maximum ratings: (1) collector-base voltage VCBO: 60V; (2) collector-emitter voltage VCEO: 50V; (3) emitter-base voltage VEBO: 5V; (4) collector current Ic: 150mA; (5) base current IB: 30mA; (6) collector power disspation PC: 200mW; (7) junction temperature TJ:125°C; (8) storage temperature range Tstg: -55 to 125°C.
Features
hn1c01fu-gr features: (1) Small package (dual type) ; (2) high voltage and high current: VCEO=50V, Ic=50mA (MAX.) ; (3) High hFE=120-400; (4) excellent hFE linearity: hFE (IC=0.1mA) / hFE (IC=2mA) =0.95 (Typ.) .
Diagrams
