(China (Mainland))
Product Summary
The BAV99W is a silicon switching diode.
Parametrics
BAV99W absolute maximum ratings: (1)Diode reverse voltage: 80 V; (2)Peak reverse voltage: 85 V; (3)Forward current: 200 mA; (4)Non-repetitive peak surge forward current t = 1 μs: 4.5 A; (5)Non-repetitive peak surge forward current t = 1 ms: 1 A; (6)Non-repetitive peak surge forward current t = 1 s, single: 0.5 A; (7)Non-repetitive peak surge forward current t = 1 s, double: 0.75 A; (8)Total power dissipation TS ≤ 110°C: 250 mW; (9)Junction temperature: 150 °C; (10)Storage temperature: -65 to 150 °C; (11)Junction - soldering point: ≤ 160 K/W.
Features
BAV99W features: (1)For high-speed switching applications; (2)Series pair configuration.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BAV99W /T3 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) DIODE SW TAPE-11 |
Data Sheet |
Negotiable |
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BAV99W,115 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) SW DBL 75V 150MA HS |
Data Sheet |
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BAV99W,135 |
NXP Semiconductors |
Diodes (General Purpose, Power, Switching) DIODE SW TAPE-11 |
Data Sheet |
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BAV99W-7 |
Diodes Inc. |
Diodes (General Purpose, Power, Switching) 75V 200mW |
Data Sheet |
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BAV99W-7-F |
Diodes Inc. |
Diodes (General Purpose, Power, Switching) 75V 200mW |
Data Sheet |
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BAV99WT1 |
ON Semiconductor |
Diodes (General Purpose, Power, Switching) 70V 215mA Dual |
Data Sheet |
Negotiable |
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BAV99WTT |
Micro Commercial Components (MCC) |
Diodes (General Purpose, Power, Switching) 150mA 75V |
Data Sheet |
Negotiable |
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BAV99WT-TP |
Micro Commercial Components (MCC) |
Diodes (General Purpose, Power, Switching) 150mA 75V |
Data Sheet |
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