(China (Mainland))
Product Summary
The as4c256k16e0-35tc is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The as4c256k16e0-35tc is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels. The as4c256k16e0-35tc features a high speed page mode operation in which high speed read, write and read-write are performed on any of the 512 × 16 bits defined by the column address.
Parametrics
as4c256k16e0-35tc absolute maximum ratings: (1)Input voltage Vin: -1.0 to +7.0 V; (2)Output voltage Vout: -1.0 to +7.0 V; (3)Power supply voltage VCC: -1.0 to +7.0 V; (4)Operating temperature TOPR: 0 to +70 °C; (5)Storage temperature (plastic)TSTG: -55 to +150 °C; (6)Power dissipation PD: 1 W; (7)Short circuit output current Iout: 50 mA; (8)Latch-up current: 200 mA.
Features
as4c256k16e0-35tc features: (1)Organization: 262,144 words × 16 bits; (2)High speed; (3)Low power consumption; (4)EDO page mode; (5)Read-modify-write; (6)TTL-compatible, three-state I/O; (7)JEDEC standard packages; (8)5V power supply; (9)Latch-up current > 200 mA.
Diagrams
