Product Summary

The UPA1770G-E2 is a P-channel MOS Field Effect Transistor designed for power management applications of portable machines.

Parametrics

UPA1770G-E2 absolute maximum ratings: (1)Drain to Source Voltage: -20 V; (2)Gate to Source Voltage: ±12 V; (3)Drain Current: ±6.0 A; (4)Drain Current (pulse): ±24 A; (5)Channel Temperature: 150℃; (6)Storage Temperature: -55 to +150℃.

Features

UPA1770G-E2 features: (1)Dual chip type; (2)Low on-resistance; (3)Low input capacitance; (4)Built-in G-S protection diode; (5)Small and surface mount package (Power SOP8).

Diagrams

UPA1770G-E2 EQUIVALENT CIRCUIT