(China (Mainland))
Product Summary
The SSD2003TF is a Dual N-channel power MOSFET.
Parametrics
SSD2003TF absolute maximum rating: (1)Drain-to-Source Voltage, VDSS: 50 V; (2)Drain-Gate Voltage(RGS=1.0MΩ), VDGR: 50V; (3)Gate-to-Source Voltage, VGS: ±20V; (4)Continuous Drain Current TA=25℃, ID: 2.0A; (5)Continuous Drain Current TA=100℃, ID: 1.6A; (6)Drain Current-Pulsed, IDM: 8.0V; (7)Total Power Dissipation TA=25℃, PD: 2.0W; TA=70℃, PD:1.3W ; (8)Operating and Storage, TJ , Junction Temperature Range, TSTG: -55 to +150℃; (9)Maximum Lead Temp. for Soldering Purposes, 1/16” from case for 5 seconds, TL: 300℃.
Features
SSD2003TF features: (1)Extremely Lower RDS(ON); (2)Improved Inductive Ruggedness; (3)Fast Switching Times; (4)Rugged Polysilicon Gate Cell Structure; (5)Low Input Capacitance; (6)Extended Safe Operating Area; (7)Improved High Temperature Reliability; (8)Surface Mounding Package: 8SOP.
Diagrams
