(China (Mainland))
Product Summary
The 2SA872 is a silicon PNP epitaxial. Applications are (1)Low frequency low noise amplifier; (2)Complementary pair with 2SC1775/A.
Parametrics
2SA872 absolute maximum ratings: (1)Collector to base voltage VCBO: –90V; (2)Collector to emitter voltage VCEO: –90V; (3)Emitter to base voltage VEBO: –5V; (4)Collector current IC: –50mA; (5)Collector power dissipation PC: 300mW; (6)Junction temperature Tj: 150 150 °C; (7)Storage temperature Tstg: –55 to +150°C.
Features
2SA872 features: (1)Collector to emitter breakdown voltage V(BR)CEO: –90 to –120 V; (2)Collector cutoff current ICBO: –0.5 mA VCB = –75 V, IE = 0,–0.5 mA VCE = –100 V, IE = 0; (3)DC current tarnsfer ratio hFE1: 250 to 800 VCE = –12 V, IC = –2 mA, hFE2 160 160 VCE = –12 V, IC = –0.1 mA; (4)Base to emitter voltage VBE: –0.75V VCE = –12 V, IC = –2 mA; (5)Collector to emitter saturation voltage VCE(sat): –0.5 V IC = –10 mA, IB = –1 mA; (6)Gain bandwidth product fT — 120 120 — MHz VCE = –12 V, IC = –2 mA; (7)Collector output capacitance Cob: 1.8pF VCB = –25 V, IE = 0, f = 1 MHz.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 2SA872A |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
2SA872 |
Other |
|
Data Sheet |
Negotiable |
|
||||
