(China (Mainland))
Product Summary
The rjk0301dpb-00-jo is a Silicon N Channel Power MOSFET.
Parametrics
rjk0301dpb-00-jo absolute maximum ratings: (1)Drain to source voltage, VDSS: 30 V; (2)Gate to source voltage, VGSS: +16/–12 V; (3)Drain current, ID: 60 A; (4)Drain peak current, ID(pulse) Note1: 240 A; (5)Body-drain diode reverse drain current, IDR: 60 A; (6)Avalanche current, IAP Note: 230 A; (7)Avalanche energy, EAR Note: 290 mJ; (8)Channel dissipation Pch Note3: 65 W; (9)Channel to Case Thermal Resistance, θch-C: 1.93 ℃/W; (10)Channel temperature, Tch: 150 ℃; (11)Storage temperature, Tstg: –55 to +150 ℃.
Features
rjk0301dpb-00-jo features: (1)High speed switching; (2)Capable of 4.5V gate drive; (3)Low drive current; (4)High density mounting; (5)Low on-resistance.
Diagrams
