(China (Mainland))
Product Summary
The hat3008r-el-e is a Silicon N/P Channel Power MOS FET.
Parametrics
hat3008r-el-e absolute maximum ratings: (1)Drain to source voltage VDSS: 60 V; (2)Gate to source voltage VGSS: ±20 V; (3)Drain current ID: 5 A; (4)Drain peak current ID(pulse)Note1: 40 A; (5)Body-drain diode IDR: 5 A; (6)Avalanche current HAT3008RJ: 5 A; (7)Channel dissipation Pch Note2: 2 W; (8)Channel dissipation Pch Note3 3 W; (9)Channel temperature Tch: 150°C; (10)Storage temperature Tstg: – 55 to + 150°C.
Features
hat3008r-el-e features: (1)For Automotive Application ( at Type Code “J “); (2)Low on-resistance; (3)Capable of 4 V gate drive; (4)High density mounting.
Diagrams
