(China (Mainland))
Product Summary
The 2sj601-z-e1-az is a P-channel MOS Field Effect Transistor. The 2sj601-z-e1-az is designed for solenoid, motor and lamp driver.
Parametrics
2sj601-z-e1-az absolute maximum ratings: (1)Drain to Source Voltage (VGS = 0 V), VDSS: –60 V; (2)Gate to Source Voltage (VGS = 0 V), VGSS: ±20 V; (3)Drain Current (DC) (TC = 25 ℃), ID(DC): ±36 A; (4)Drain Current (pulse)，ID(pulse): ±120 A; (5)Total Power Dissipation (TC = 25 ℃), PT: 65 W; (6)Total Power Dissipation, PT: 1.0 W; (7)Channel Temperature, Tch: 150 ℃; (8)Storage Temperature, Tstg: –55 to +150 ℃; (9)Single Avalanche Current, IAS: –35 A; (10)Single Avalanche Energy, EAS: 123 mJ.
Features
2sj601-z-e1-az features: (1)Low on-state resistance: RDS(on)1 = 31 mΩ MAX.; (2)Low Ciss: Ciss = 3300 pF TYP.; (3)Built-in gate protection diode; (4)TO-251/TO-252 package.
Diagrams
